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Photovoltaics: RWP
Photovoltaics: RWP
PV-RWP (Research Work Package) SHJ/Thin film Tandem Solar Cell
PV-RWP (Research Work Package) SHJ/Thin film Tandem Solar Cell
A high bandgap, high efficiency, low-cost cell in combination with crystalline wafer cells will give a value-added efficiency boost beyond the S-Q limit of c-Si type cell (29% for 1.12 eV) without substantially adding extra cost/Wp to the product. We intend to adopt the SHJ solar cell developed in PV-TWP project as bottom cell and improvise the various thin-film cells (e.g. Perovskite, DSSC) developed during the earlier SERI projects as top cell and connect them by an efficient tunnel recombination junction to fabricate a high efficiency 2 terminal tandem solar cell device. Success to the light trapping design of the bottom cell would lead to >25% efficiency for the tandem device.
Objectives:
Combination of 1st generation c-Si based SHJ cell with the most promising thin-film based cell to generate a 3rd generation multijunction solar cell which has the potential to reach beyond 30% efficiency.
Value add to the device performance of BHEL pilot in-line wafer cell.
Domain Team
Domain Team
Dr. Jatindra K. Rath, Domain Coordinator, Phyics, IITM
Dr. R. Kothandaraman, Domain Coordinator-RWP, CY, IITM
Dr. Soumya Dutta, EE, IITM
Dr. Edmana Prasad, CY, IITM
Dr. P. Venkatakrshnan, CY, IITM
Dr. M. S. Ramachandra Rao, Physics, IITM
Dr. P. N. Santosh, Physics, IITM
Dr. K. Sethupathi, Physics, IITM
Dr. P. Murugavel, Physics, IITM
Dr. Tiju Thomas, MME, IITM
Dr. Deleep Nair, EE, IITM
Projects:
Projects:
Bottom cell development:
SHJ cell for very thin wafers is expected to boost open circuit voltage (Voc) of the bottom cell. This is a very challenging project to address the stress on wafer and maintaining plasma condition during fabrication.
Top cell fabrication:
a high band gap (~1.75eV,), semitransparent top cell with stable band gap absorber material will be developed. The group has already developed considerable experience in Perovskite and DSSC cell technology during the earlier SERI projects. Necessary adaptation will be made to the absorber layer to achieve this target. A Voc of >1V is aimed at.
Tunnel recombination junction :
A transparent efficient recombination junction for the 2 terminal series connected device will be developed. Light management at the junction between two cells play a major role in spectral splitting between the cells. Various photonic and other novel features will be developed and implemented here.
High voltage cell:
Through a multi-junction thin cell design a high voltage cell, voltage >2V per cell, is expected. The challenge to contain shunt leakage will be our main focus here. This will lead to many spin-off activities.
High efficiency cell:
A 3rd generation high efficiency wafer based tandem solar cell of > 22% energy conversion efficiency is expected during this project. In long run, this technology can be up scaled and implemented in BHEL fabrication tool with a minor addition to the processing sequence.
DSEHC office
DSEHC office
Room No. 111
Material Science Research Center (MSRC)
Indian Institute of Technology Madras
Chennai – 600036
+91-44-22575913
DST IIT Solar Energy Harnessing Centre
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